Effect of deposition temperature on the quality of Ba0.3Sr0.7TiO3 ferroelectric thin films

Authors

  • Awitdrus Awitdrus Department of Physics, Universitas Riau, Pekanbaru 28293, Indonesia Author
  • A Fuad Department of Physics, Universitas Negeri Malang, Malang 65145, Indonesia Author
  • M Barmawi Department of Physics, Institut Teknologi Bandung, Bandung 40132, Indonesia Author

DOI:

https://doi.org/10.31258/jkfi.1.1.12-16

Keywords:

Deposition temperature, Ba0.3Sr0.7TiO3 ferroelectricity, XRD, SEM

Abstract

Deposition of Ba0.3Sr0.7TiO3 ferroelectric thin films on Pt/SiO2/Si and Si substrates with deposition temperatures of 650°C, 675°C and 700°C using the pulse laser deposition method. Preparation of Ba0.3Sr0.7TiO3 ferroelectric targets began with a mixture of BaCO3, SrCO3 and TiO2 with solid state reaction, calcination at 1100°C for 2 hours and sintering at 1350°C for 4 hours. In-situ and ex-situ annealing of Ba0.3Sr0.7TiO3 ferroelectric thin films in oxygen environment were carried out at 700°C for 30 minutes and 850°C for 5 hours. Characterization of Ba0.3Sr0.7TiO3 ferroelectric thin films included X-ray diffraction and scanning electron microscopy (SEM) characterization. The results of X-ray diffraction show that the quality of Ba0.3Sr0.7TiO3 ferroelectric thin films improves with increasing deposition temperature and annealing temperature as indicated by the emergence of new peaks, increasing peak intensity at the (200) plane orientation and decreasing full width at half maximum value. The results of SEM characterization show the presence of particle grains that are decreasing in size and number of grains with increasing deposition temperature.

Published

2002-04-30